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QM2520C1 fiches techniques PDF

UBIQ - Dual N-Ch 20V Fast Switching MOSFETs

Numéro de référence QM2520C1
Description Dual N-Ch 20V Fast Switching MOSFETs
Fabricant UBIQ 
Logo UBIQ 





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QM2520C1 fiche technique
QM2520C1
Dual N-Ch 20V Fast Switching MOSFETs
General Description
The QM2520C1 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The QM2520C1 meet the RoHS and Green
Product requirement with full function reliability
approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
20V
RDSON
115m
ID
1.4 A
Applications
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOT363 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V1
Continuous Drain Current, VGS @ 4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
Rating
20
±8
1.4
1.1
7.2
0.33
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Typ.
---
---
Max.
375
240
Unit
/W
/W
Rev A.02 D072911
1

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