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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB095B-90
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB095B-90 fiche technique
Schottky Barrier Diode
RB095B-90
Applications
General rectification
Dimensions(Unit : mm)
Data Sheet
Land size figure(Unit : mm)
6.0
Features
1)Power mold type.(CPD)
2)Low VF
3)High reliability
Construction
Silicon epitaxial planar
1.6 1.6
ROHM : CPD
JEITA : SC-63
Manufacture Date
CPD 2.3 2.3
Structure
(2)
(1) (3)
Taping specifications(Unit : mm)
2.0 0.05
4.0 0.1
8.0 0.1
1.55 0.1
0
TL
0.4 0.1
6.8 0.1
8.0 0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
90
90
6
Forward current surge peak (60Hz / 1cyc)(*1)
Junction temperature
IFSM
Tj
45
150
Storage temperature
Tstg 40 to 150
(*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=122C
3.0 0.1
Unit
V
V
A
A
C
C
2.7 0.2
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
VF - - 0.75
IR - - 150
jc - - 6.0
Unit
V
A
C/W
Conditions
IF=3.0A
VR=90V
junction to case
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.F

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