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CDBA5100-HF fiches techniques PDF

Comchip Technology - SMD Schottky Barrier Rectifiers

Numéro de référence CDBA5100-HF
Description SMD Schottky Barrier Rectifiers
Fabricant Comchip Technology 
Logo Comchip Technology 





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CDBA5100-HF fiche technique
SMD Schottky Barrier Rectifiers
CDBA540-HF Thru. CDBA5200-HF
Reverse Voltage: 40 to 200 Volts
Forward Current: 5.0 Amp
RoHS Device
Halogen Free
Features
DO-214AC (SMA)
-Low Profile surface mount applications
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guard ring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
0.067 (1.70)
0.047 (1.20)
0.187 (4.75)
0.157 (4.00)
0.114 (2.90)
0.083 (2.10)
0.012 (0.30)
TYP.
Mechanical data
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, DO-214AC / SMA
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-weight: 0.055 grams
0.098 (2.50)
0.067 (1.70)
0.061 (1.55)
0.030 (0.75)
0.008(0.20)
0.003(0.08)
0.224 (5.70)
0.185 (4.70)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
Parameter
Max. repetitive peak reverse voltage
Symbol
VRRM
CDBA
540-HF
40
CDBA
560-HF
60
CDBA
5100-HF
100
Max. DC blocking voltage
VDC 40
60 100
Max. RMS voltage
Max. instantaneous forward voltage @
5.0A, TA=25°C
Operating Temperature
VRMS
VF
TJ
28 42 70
0.55 0.75 0.81
-50 to +150
CDBA
5150-HF
150
CDBA
5200-HF
200
150 200
105 140
0.87 0.90
-50 to +175
Units
V
V
V
V
°C
Parameter
Forward rectified current
Forward surge current
Reverse Current
Thermal Resistance
Conditions
see Fig.1
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
VR =VRRM TA=25°C
VR =VRRM TA=100°C
Junction to ambient
Symbol
IO
IFSM
IR
IR
RθJA
MIN.
TYP.
24
MAX.
5.0
125
0.5
20
Units
A
A
mA
mA
°C/W
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage
CJ
380 pF
Storage temperature
TSTG
-50
+175
°C
Company reserves the right to improve product design , functions and reliability without notice. REV: C
QW-JB021
Comchip Technology CO., LTD.
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