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RECTRON - PNP Transistor

Numéro de référence BC858C
Description PNP Transistor
Fabricant RECTRON 
Logo RECTRON 





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BC858C fiche technique
BC858C
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
PCM :
0.225
W (Tamb=25OC) Note1
* Collector current
ICM :
-0.1 A
* Collector-base voltage
V(BR)CBO : -30
V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (IC= -10mA, IE=0)
Collector-emitter breakdown voltage (IC= -10mA, IB=0)
Emitter-base breakdown voltage (IE= -10mA, IC=0)
Collector cut-off current (VCB= -25V, IE=0)
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Collector cut-off current (VCE= -25V, IB=0)
Emitter cut-off current (VEB= -5V, IC=0)
DC current gain (VCE= -5V, IC= -2mA)
Collector-emitter saturation voltage (IC= -100mA, IB= -5mA)
ICEO
IEBO
hFE(1)
VCE(sat)
Base-emitter saturation voltage (IC= -100mA, IB= -10mA)
Transition frequency (VCE= -5V, IC= -10mA, f= 100MHZ)
VBE(sat)
fT
DEVICE MARKING
BC858C
Notes : 1. Transistor mounted on an FR4 Printed-circuit board.
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
SOT-23
COLLECTOR
3
BASE 1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
-30
-30
-5
-
-
-
420
-
-
100
3L
MAX
-
-
-
-0.1
-0.1
-0.1
800
-0.5
-1.1
-
UNITS
V
V
V
mA
mA
mA
-
V
V
MHZ
2007-3

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