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PDF uPA2590 Data sheet ( Hoja de datos )
| Número de pieza | uPA2590 | |
| Descripción | N- AND P-CHANNEL MOSFET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2590
N- AND P-CHANNEL MOSFET
FOR SWITCHING
DESCRIPTION
The μ PA2590 is N- and P-channel MOSFETs designed for
DC/DC converters and power management applications of
portable equipments.
N- and P-channel MOSFETs are assembled in one package, to
contribute minimize the equipments.
PACKAGE DRAWING (Unit: mm)
2.9±0.1
0.65
8
5
A
0.17±0.05
0 to 0.025
FEATURES
• 4.5 V drive available
• Low on-state resistance
N-channel RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2 A)
RDS(on)2 = 83 mΩ MAX. (VGS = 4.5 V, ID = 2 A)
P-channel RDS(on)1 = 72 mΩ MAX. (VGS = −10 V, ID = −2 A)
RDS(on)2 = 105 mΩ MAX. (VGS = −4.5 V, ID = −2 A)
• Built-in gate protection diode
• Small and surface mount package (8-pin VSOF (2429))
1
0.32±0.05
S
4
0.05 M S A
N-channel 1: Source
2: Gate
7, 8: Drain
P-channel 3: Source
4: Gate
5, 6: Drain
ORDERING INFORMATION
PART NUMBER
μ PA2590T1H-T1-AT Note
μ PA2590T1H-T2-AT Note
LEAD PLATING
Pure Sn
PACKING
8 mm embossed taping
3000 p/reel
PACKAGE
8-pin VSOF (2429)
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Marking: 2590
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19217EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
2008
1 page  
μ PA2590
TYPICAL CHARACTERISTICS (TA = 25°C)
(1) N-channel MOSFET
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2
Mounted on FR-4 board of
25.4 mm x 25.4 mm x 0.8 mmt
1.5
1 unit, 5 s
1
40 2 units, 5 s
0.5
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10 RD(VS(oGnS)
Limit
= 1i 0
ed
V)
ID(DC)
ID(pulse)
PW = 300 μs
1
0.1
0.01
Single Pulse
Mounted on FR-4 board of
25.4 mm x 25.4 mm x 0.8 mmt
PD (FET1) : PD (FET2) = 1 : 1
0.1 1
10
1 ms
10 ms
100 ms
5s
100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PD (FET1) : PD (FET2) = 1 : 1
100
PD (FET1) : PD (FET2) = 1 : 0
10
1
1m
10 m
Single Pulse
Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
100 m
1
10
PW - Pulse Width - s
Data Sheet G19217EJ1V0DS
100 1000
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet uPA2590.PDF ] | |
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