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Numéro de référence | IRF5851PbF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
PD-95341A
IRF5851PbF
HEXFET® Power MOSFET
*
6
'
6
VDSS
N-Ch
20V
P-Ch
-20V
*
' RDS(on) 0.090Ω 0.135Ω
Description
These N and P channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit
board space is at a premium and where maximum functionality is required.
With two die per package, the IRF5851 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal design and
RDS(on) reduction enables an increase in current-handling capability.
TSOP-6
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient
www.irf.com
Max.
N-Channel
P-Channel
20 -20
2.7 -2.2
2.2 -1.7
11 -9.0
0.96
0.62
7.7
± 12
-55 to + 150
Units
A
W
mW/°C
V
°C
Typ.
–––
Max.
130
Units
°C/W
1
04/20/10
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Pages | Pages 14 | ||
Télécharger | [ IRF5851PbF ] |
No | Description détaillée | Fabricant |
IRF5851PbF | Power MOSFET ( Transistor ) | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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