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IRF5852PbF Datasheet دیتاشیت PDF دانلود

دیتاشیت - International Rectifier - Power MOSFET

شماره قطعه IRF5852PbF
شرح مفصل Power MOSFET
تولید کننده International Rectifier 
آرم International Rectifier 


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IRF5852PbF شرح
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
VDSS
20 V
PD - 95261A
IRF5852PbF
HEXFET® Power MOSFET
RDS(on) max (W)
0.090@VGS = 4.5V
0.120@VGS = 2.5V
ID
2.7A
2.2A
Description
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDS(on)
reduction enables an increase in current-handling
capability.
TSOP-6
B
T! !
B! "
%9
$T
# 9!
Top View
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
2.7
2.2
11
0.96
0.62
7.7
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
130
Units
°C/W
1
04/20/10

قانون اساسیصفحه 9
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