DataSheetWiki


MBR1590CT fiches techniques PDF

Taiwan Semiconductor - Dual Common Cathode Schottky Rectifier

Numéro de référence MBR1590CT
Description Dual Common Cathode Schottky Rectifier
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





1 Page

No Preview Available !





MBR1590CT fiche technique
MBR1535CT thru MBR15150CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.88 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 1535 1545 1550 1560 1590 15100 15150
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
CT CT CT CT CT CT CT
35 45 50 60 90 100 150
24 31 35 42 63 70 105
35 45 50 60 90 100 150
15
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
15
UNIT
V
V
V
A
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=7.5A, TJ=25
IF=7.5A, TJ=125
IF=15A, TJ=25
IF=15A, TJ=125
IFSM
IRRM
VF
1
-
0.57
0.84
0.72
150
0.75
0.65
-
-
0.5
0.92
0.82
-
-
A
A
1.05
0.92 V
-
-
Maximum reverse current @ rated VR
Voltage rate of change (Rated VR)
TJ=25
TJ=125
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IR
dV/dt
RθJC
RθJA
TJ
TSTG
0.5
10
0.3
7.5
10000
1.5
10
- 55 to +150
- 55 to +150
0.1
5.0
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1308062
Version: H13

PagesPages 4
Télécharger [ MBR1590CT ]


Fiche technique recommandé

No Description détaillée Fabricant
MBR1590CT SCHOTTKY BARRIER RECTIFIER MDD
MDD
MBR1590CT Dual Common Cathode Schottky Rectifier Taiwan Semiconductor
Taiwan Semiconductor
MBR1590CT Schottky Barrier Rectifiers LGE
LGE

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche