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FLC097WF fiches techniques PDF

Eudyna Devices - C-Band Power GaAs FET

Numéro de référence FLC097WF
Description C-Band Power GaAs FET
Fabricant Eudyna Devices 
Logo Eudyna Devices 





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FLC097WF fiche technique
FEATURES
• High Output Power: P1dB = 28.8dBm (Typ.)
• High Gain: G1dB = 8.5dB(Typ.)
• High PAE: ηadd = 35%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
FLC097WF
C-Band Power GaAs FET
DESCRIPTION
The FLC097WF is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed +10 volts.
2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistance of 400.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
+15
-5
4.16
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 200mA
-
-
Pinch-off Voltage
Vp
Gate Source Breakdown Voltage VGSO
VDS = 5V, IDS =15mA
IGS = -15µA
-1.0
-5
Limit
Typ. Max.
300 450
150 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 6 GHz
27.5 28.8 -
7.5 8.5 -
Power-added Efficiency
ηadd
- 35 -
Unit
mA
mS
V
V
dBm
dB
%
Thermal Resistance
CASE STYLE: WF
Rth Channel to Case
- 25 36
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1

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