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PDF FLC057WG Data sheet ( Hoja de datos )
| Número de pieza | FLC057WG | |
| Descripción | C-Band Power GaAs FET | |
| Fabricantes | Fujitsu | |
| Logotipo |  |
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FLC057WG
FEATURES
• High Output Power: P1dB = 27.0dBm(Typ.)
• High Gain: G1dB = 9.0dB(Typ.)
• High PAE: ηadd = 38%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
C-Band Power GaAs FET
DESCRIPTION
The FLC057WG is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Channel Temperature
Tstg
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with
gate resistance of 1000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
3.75
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 125mA
-
-
Pinch-off Voltage
Vp
Gate Source Breakdown Voltage VGSO
VDS = 5V, IDS =10mA
IGS = -10µA
-1.0
-5
Limit
Typ. Max.
200 300
100 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V
IDS ≈ 0.6 IDSS (Typ.),
f = 8 GHz
25.5 27.0 -
8.0 9.0 -
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 38 -
%
Thermal Resistance
CASE STYLE: WG
Rth Channel to Case
- 27 40
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLC057WG.PDF ] | |
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