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PDF IRFPS30N60K Data sheet ( Hoja de datos )
| Número de pieza | IRFPS30N60K | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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IRFPS30N60K, SiHFPS30N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
220
64
110
Single
0.16
D
SUPER-247TM
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
Super-247TM
IRFPS30N60KPbF
SiHFPS30N60K-E3
IRFPS30N60K
SiHFPS30N60K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 1.1 mH, RG = 25 Ω, IAS = 30 A.
c. ISD ≤ 30 A, dI/dt ≤ 630 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91256
S09-0007-Rev. B, 19-Jan-09
LIMIT
600
± 30
30
19
120
3.6
520
30
45
450
13
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
www.vishay.com
1
1 page  
30
24
18
12
6
0
25 50 75 100 125 150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
IRFPS30N60K, SiHFPS30N60K
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
Document Number: 91256
S09-0007-Rev. B, 19-Jan-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFPS30N60K.PDF ] | |
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