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Vishay - Power MOSFET ( Transistor )

Numéro de référence IRF737LC
Description Power MOSFET ( Transistor )
Fabricant Vishay 
Logo Vishay 





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IRF737LC fiche technique
Power MOSFET
IRF737LC, SiHF737LC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
300
VGS = 10 V
17
4.8
7.6
Single
TO-220
D
0.75
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Reduced Gate Drive Requirement
• Enhanced 30 V VGS Rating
• Reduced Ciss, Coss, Crss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional Power
MOSFETs. Utilizing the new LCDMOS technology, the
device improvements are achieved without added product
cost, allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new low charge Power
MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristics of Power
MOSFETs offer the designer a new standard in power
transistors for switching applications.
TO-220
IRF737LCPbF
SiHF737LC-E3
IRF737LC
SiHF737LC
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 5.7 mH, RG = 25 Ω, IAS = 6.1 A (see fig. 12).
c. ISD 6.1 A, dI/dt 270 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
300
± 30
6.1
3.9
24
0.59
120
6.1
7.4
74
3.4
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91050
S-82998-Rev. A, 12-Jan-09
www.vishay.com
1

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