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PDF JCS13N50FT Data sheet ( Hoja de datos )
| Número de pieza | JCS13N50FT | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | JILIN SINO-MICROELECTRONICS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de JCS13N50FT (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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N 沟道增强型场效应晶体管
N- CHANNEL MOSFET
R
JCS13N50FT
主要参数 MAIN CHARACTERISTICS
ID
VDSS
Rdson（@Vgs=10V）
Qg
13 A
500 V
0.46Ω
37 nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 25pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 25pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
封装 Package
订货信息 ORDER MESSAGE
订货型号
Order codes
JCS13N50FT-O-F-N-B
印记
Marking
JCS13N50FT
封装
Package
TO-220MF
无卤素
Halogen Free
否 NO
包装
Packaging
条管 Tube
器件重量
Device Weight
2.20 g(typ)
版本：201010B
1/8
1 page  
R JCS13N50FT
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Region Characteristics
Transfer Characteristics
Vgs
Top: 15.0V
10.0V
9.0V
8.0V
7.0V
101 6.5V
Buttom : 5.5V
10
1 150℃
25℃
100
100
101
VDS Drain-Source Voltage[V]
On-Resistance Variation vs
Drain Current and Gate Voltage
0.6
VGS=10V
Notes：
0.1 1.250μs pulse test
2.VDS=40V
2 4 6 8 10
VGS Gate-Source Voltage[V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
0.4 VGS=20V
0.2
0 5 10 15 20
ID Drain Current [A]
Capacitance Characteristics
1
150℃
25℃
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VSD Source-Drain voltage[V]
Capacitance Characteristics
12
VDS=100V
10 VDS=250V
VDS=400V
8
6
4
2
0
0 10 20 30 40
Qg Toltal Gate Charge [nC]
版本：201010B
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet JCS13N50FT.PDF ] | |
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