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PDF IRFL9110 Data sheet ( Hoja de datos )
| Número de pieza | IRFL9110 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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IRFL9110, SiHFL9110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
-100
VGS = -10 V
8.7
2.2
4.1
Single
1.2
S
SOT-223
D
S
D
G
Marking code: FF
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
SOT-223
SiHFL9110-GE3
IRFL9110PbF
SiHFL9110-E3
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• P-channel
• Fast switching
• Ease of paralleling
Available
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infrared, or wave soldering techniques. Its
unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
SOT-223
SiHFL9110TR-GE3 a
IRFL9110TRPbF a
SiHFL9110T-E3 a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) e
Peak Diode Recovery dV/dt c
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = -25 V, starting TJ = 25 °C, L = 7.7 mH, Rg = 25 , IAS = -4.4 A (see fig. 12).
c. ISD -4.4 A, dI/dt -75 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
-100
± 20
-1.1
-0.69
-8.8
0.025
0.017
100
-1.1
0.31
3.1
2.0
-5.5
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S14-1686-Rev. F, 18-Aug-14
1
Document Number: 91196
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFL9110, SiHFL9110
Vishay Siliconix
VDS
VGS
Rg
RD
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+VDD
Fig. 10a - Switching Time Test Circuit
VGS
10 %
td(on) tr
td(off) tf
90 %
VDS
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S14-1686-Rev. F, 18-Aug-14
5
Document Number: 91196
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFL9110.PDF ] | |
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