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Número de pieza IKW40N65ES5
Descripción IGBT
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No Preview Available ! IKW40N65ES5 Hoja de datos, Descripción, Manual

IGBT
TRENCHSTOPTM5highSpeedsoftswitchingIGBTwithfullcurrentratedRAPID1diode
IKW40N65ES5
650VTRENCHSTOPTM5highspeedsoftswitchingduopak
Datasheet
IndustrialPowerControl

1 page




IKW40N65ES5 pdf
IKW40N65ES5
TRENCHSTOPTM5softswitchingIGBT
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.40mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=40.0A
min.
Value
typ.
max. Unit
650 -
-V
-
-
1.35 1.70
1.50 -
V
- 1.60 -
-
-
1.45 1.70
1.42 -
V
- 1.39 -
3.2 4.0 4.8 V
- - 50 µA
- 1700 -
- - 100 nA
- 45.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=40.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 2500 -
- 71 - pF
-9-
- 95.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=40.0A,
VGE=0.0/15.0V,
RG(on)=10.0,RG(off)=10.0,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
- 19 - ns
- 18 - ns
- 130 - ns
- 23 - ns
- 0.86 - mJ
- 0.40 - mJ
- 1.26 - mJ
5 Rev.2.2,2015-10-16

5 Page





IKW40N65ES5 arduino
IKW40N65ES5
TRENCHSTOPTM5softswitchingIGBT
2.5
Eoff
Eon
Ets
2.0
2.5
Eoff
Eon
Ets
2.0
1.5 1.5
1.0 1.0
0.5 0.5
0.0
25
50 75 100 125 150
Tvj,JUNCTIONTEMPERATURE[°C]
175
Figure 13. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=40A,RGon=10,RGoff=10,dynamictest
circuit in Figure E)
0.0
200 260 320 380 440 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 14. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=40A,RGon=10,RGoff=10,dynamictest
circuit in Figure E)
16
VCC=130V
VCC=520V
14
1E+4
Cies
Coes
Cres
12
1000
10
8
100
6
4 10
2
0
0 20 40 60 80
QGE,GATECHARGE[nC]
Figure 15. Typicalgatecharge
(IC=40A)
1
100 0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
11 Rev.2.2,2015-10-16

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