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PDF IRF9610 Data sheet ( Hoja de datos )
| Número de pieza | IRF9610 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Power MOSFET
IRF9610, SiHF9610
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 200
VGS = - 10 V
11
7.0
4.0
Single
3.0
S
TO-220
G
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRF9610PbF
SiHF9610-E3
IRF9610
SiHF9610
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS at - 10 V
TC = 25
TC = 100
VDS
VGS
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Maximum Power Dissipation
Inductive Current, Clamp
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
ILM
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not applicable.
c. ISD ≤ - 1.8 A, dI/dt ≤ 70 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91080
S09-0046-Rev. A, 19-Jan-09
LIMIT
- 200
± 20
- 1.8
- 1.0
- 7.0
0.16
20
- 7.0
- 5.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
W
A
V/ns
°C
lbf · in
N·m
www.vishay.com
1
1 page  
IRF9610, SiHF9610
Vishay Siliconix
7
RDS(on) measured with current pulse of
6
2.0 µs duration. Initial TJ = 25 °C.
(Heating effect of 2.0 µs pulse is minimal.)
5
VGS = - 10 V
4
3
VGS = - 20 V
2
1
0
0 -1 -2 -3 -4 -5 -6 -7
91080_12
ID, Drain Current (A)
Fig. 12 - Typical On-Resistance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
0.0
25 50 75 100 125 150
91080_13
TC, Case Temperature (°C)
Fig. 13 - Maximum Drain Current vs. Case Temperature
20
15
10
5
0
0 20 40 60 80 100 120 140
91080_14
TC, Case Temperature (°C)
Fig. 14 - Power vs. Temperature Derating Curve
L
Vary tp to obtain
required IL
VDS
VDD
VGS = - 10 V tp
D.U.T.
EC
IL
VDD = 0.5 VDS
0.05 Ω
EC = 0.75 VDS
-
+
Fig. 15 - Clamped Inductive Test Circult
Document Number: 91080
S09-0046-Rev. A, 19-Jan-09
VDD
IL
tp VDS
EC
Fig. 16 - Clamped Inductive Waveforms
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF9610.PDF ] | |
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