DataSheetWiki


IRF9520S fiches techniques PDF

Vishay - Power MOSFET ( Transistor )

Numéro de référence IRF9520S
Description Power MOSFET ( Transistor )
Fabricant Vishay 
Logo Vishay 





1 Page

No Preview Available !





IRF9520S fiche technique
Power MOSFET
IRF9520S, SiHF9520S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
- 100
VGS = - 10 V
18
Qgs (nC)
3.0
Qgd (nC)
9.0
Configuration
Single
D2PAK (TO-263)
S
0.60
G
GD
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHF9520S-GE3
IRF9520SPbF
SiHF9520S-E3
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
D2PAK (TO-263)
SiHF9520STRL-GE3a
IRF9520STRLPbFa
SiHF9520STL-E3a
D2PAK (TO-263)
SiHF9520STRR-GE3a
IRF9520STRRPbFa
SiHF9520STR-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 , IAS = - 6.8 A (see fig. 12).
c. ISD - 6.8 A, dI/dt 110 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
- 100
± 20
- 6.8
- 4.8
- 27
0.40
0.025
300
- 6.8
6.0
60
3.7
- 5.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91075
S11-1050-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PagesPages 9
Télécharger [ IRF9520S ]


Fiche technique recommandé

No Description détaillée Fabricant
IRF9520 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET Intersil Corporation
Intersil Corporation
IRF9520N Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) International Rectifier
International Rectifier
IRF9520NL Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) International Rectifier
International Rectifier
IRF9520NPBF HEXFET POWER MOSFET International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche