DataSheetWiki


IRF840L fiches techniques PDF

Vishay - Power MOSFET ( Transistor )

Numéro de référence IRF840L
Description Power MOSFET ( Transistor )
Fabricant Vishay 
Logo Vishay 





1 Page

No Preview Available !





IRF840L fiche technique
Power MOSFET
IRF840L, SiHF840L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
63
9.3
32
Single
0.85
I2PAK
(TO-262)
D
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The I2PAK (TO-262) is a power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance.
The I2PAK (TO-262) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W.
I2PAK (TO-262)
SiHF840L-GE3
IRF840LPbF
SiHF840L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
TC = 100 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 20
8.0
5.1
32
1.0
510
8.0
13
125
50
3.5
- 55 to + 150
300d
UNIT
V
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91069
S10-2554-Rev. B, 08-Nov-10
www.vishay.com
1

PagesPages 9
Télécharger [ IRF840L ]


Fiche technique recommandé

No Description détaillée Fabricant
IRF840 500V, 8A, N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola  Inc
Motorola Inc
IRF840 8A, 500V, N-Channel MOSFET, Transistor NXP Semiconductors
NXP Semiconductors
IRF840 N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET STMicroelectronics
STMicroelectronics
IRF840 500V, 8A, N-CHANNEL POWER MOSFET Samsung semiconductor
Samsung semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche