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IRF740AL fiches techniques PDF

Vishay - Power MOSFET ( Transistor )

Numéro de référence IRF740AL
Description Power MOSFET ( Transistor )
Fabricant Vishay 
Logo Vishay 





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IRF740AL fiche technique
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
400
VGS = 10 V
36
9.9
16
Single
I2PAK (TO-262)
D2PAK (TO-263)
0.55
D
G
DS
G
D
S
G
S
N-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective Coss specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset (Both for US Line
Input Only)
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF740AS-GE3
Lead (Pb)-free
IRF740ASPbF
SiHF740AS-E3
Note
a. See device orientation.
D2PAK (TO-263)
SiHF740ASTRL-GE3a
IRF740ASTRLPbFa
SiHF740ASTL-E3a
D2PAK (TO-263)
SiHF740ASTRR-GE3a
IRF740ASTRRPbFa
SiHF740ASTR-E3a
I2PAK (TO-262)
SiHF740AL-GE3
IRF740ALPbF
SiHF740AL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Pulsed Drain Currenta, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TA = 25 °C
TC = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 12.6 mH, Rg = 25 , IAS = 10 A (see fig. 12).
c. ISD 10 A, dI/dt 330 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRF740A, SiHF740A data and test conditions.
LIMIT
400
± 30
10
6.3
40
1.0
630
10
12.5
3.1
125
5.9
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91052
S11-1048-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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