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IRF820AL fiches techniques PDF

Vishay - Power MOSFET ( Transistor )

Numéro de référence IRF820AL
Description Power MOSFET ( Transistor )
Fabricant Vishay 
Logo Vishay 





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IRF820AL fiche technique
IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Max.) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
17
4.3
8.5
Single
I2PAK (TO-262)
D2PAK (TO-263)
3.0
D
G
SD
D
G
S
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
G
S
N-Channel MOSFET
D2PAK (TO-263)
SiHF820AS-GE3
IRF820ASPbF
SiHF820AS-E3
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche
Voltage and Current
• Effective Coss specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge and Full Bridge
I2PAK (TO-262)
SiHF820AL-GE3
IRF820ALPbF
SiHF820AL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 45 mH, Rg = 25 , IAS = 2.5 A (see fig. 12).
c. ISD 2.5 A, dI/dt 270 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRF820A, SiHF820A data and test conditions.
LIMIT
500
± 30
2.5
1.6
10
0.4
140
2.5
5.0
50
3.4
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91058
S11-1049-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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