PDF IRF820A Data sheet ( Hoja de datos )

Número de pieza	IRF820A
Descripción	Power MOSFET ( Transistor )
Fabricantes	Vishay
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No Preview Available ! Power MOSFET IRF820A, SiHF820A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 500 VGS = 10 V 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration Single 3.0 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Two Transistor Forward • Half bridge • Full bridge TO-220AB IRF820APbF SiHF820A-E3 IRF820A SiHF820A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 45 mH, Rg = 25 Ω, IAS = 2.5 A (see fig. 12). c. ISD ≤ 2.5 A, dI/dt ≤ 270 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. LIMIT 500 ± 30 2.5 1.6 10 0.40 140 2.5 5.0 50 3.4 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91057 S11-0507-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1 page 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 91054_09 50 75 100 125 TC, Case Temperature (°C) 150 Fig. 9 - Maximum Drain Current vs. Case Temperature IRF820A, SiHF820A Vishay Siliconix VDS VGS RG RD D.U.T. 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % +- VDD Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 10-2 10-5 91057_11 Single Pulse (Thermal Response) 10-4 10-3 10-2 t1, Rectangular Pulse Duration (s) PDM t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 0.1 1 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91057 S11-0507-Rev. B, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 5 Page

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