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Datasheet NDTS2415C-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
NDT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NDT | Isolated 3W Wide Input Dual Output DC-DC Converters C&D Technologies converter | | |
| 2 | NDT014 | N-Channel Enhancement Mode Field Effect Transistor September 1996
NDT014 N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to m  Fairchild transistor | | |
| 3 | NDT014L | N-Channel Logic Level Enhancement Mode Field Effect Transistor August 1996
NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especi Fairchild transistor | | |
| 4 | NDT01N60 | N-Channel Power MOSFET, Transistor NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea  ON Semiconductor mosfet | | |
| 5 | NDT01N60T1G | N-Channel Power MOSFET, Transistor NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea ON Semiconductor mosfet | | |
| 6 | NDT02N40 | N-Channel Power MOSFET, Transistor NDD02N40, NDT02N40
N-Channel Power MOSFET 400 V, 5.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage Gate−to� ON Semiconductor mosfet | | |
| 7 | NDT02N60Z | N-Channel Power MOSFET, Transistor NDT02N60Z
N-Channel Power MOSFET 600 V, 8.0 W
Features
• 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Zener−protected • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise not ON Semiconductor mosfet | |
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