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Numéro de référence | B1353 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | INCHANGE | ||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Good Linearity of hFE
· Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Complement to Type 2SD2033
APPLICATIONS
·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-5.0 V
IC Collector Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-1.5 A
1.8
W
20
150 ℃
-55~150
℃
Product Specification
2SB1353
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ B1353 ] |
No | Description détaillée | Fabricant |
B1351 | PNP Transistor - 2SB1351 | Sanken Electric |
B1353 | Silicon PNP Power Transistor | INCHANGE |
B1357 | PNP Transistor - 2SB1357 | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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