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INCHANGE - Silicon PNP Power Transistor

Numéro de référence 2SB1353
Description Silicon PNP Power Transistor
Fabricant INCHANGE 
Logo INCHANGE 





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2SB1353 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Good Linearity of hFE
· Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Complement to Type 2SD2033
APPLICATIONS
·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-5.0 V
IC Collector Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-1.5 A
1.8
W
20
150
-55~150
Product Specification
2SB1353
isc websitewww.iscsemi.cn
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