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IPI020N06N fiches techniques PDF

Infineon Technologies - Power Transistor

Numéro de référence IPI020N06N
Description Power Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPI020N06N fiche technique
Type
OptiMOSTM Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
IPI020N06N
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
60 V
2.0 mW
120 A
119 nC
106 nC
PG-TO262-3
Type
IPI020N06N
Package
PG-TO262-3
Marking
020N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
120 A
120
V GS=10 V, T C=25 °C,
R thJA =50K/W
29
Pulsed drain current2)
I D,pulse T C=25 °C
480
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W
420 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20

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