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PDF IPB014N06N Data sheet ( Hoja de datos )
| Número de pieza | IPB014N06N | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Type
OptiMOSTM Power-Transistor
Features
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel, normal level
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
IPB014N06N
60 V
1.4 mW
180 A
119 nC
106 nC
Type
IPB014N06N
Package
TO263-7
Marking
014N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V,T C=100 °C
180 A
180
V GS=10 V, T C=25 °C,
R thJA =50K/W
34
Pulsed drain current2)
I D,pulse T C=25 °C
720
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W
420 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 1
2012-12-20
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
720
10 V
640
560
IPB014N06N
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
5
4 5V
480
6V 7V
400
5.5 V
3
5.5 V
320 6 V
2
240
5V
7V
160
10 V
1
80
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS [V]
0
0 80 160 240 320 400 480 560 640 720
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
720
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
300
640
250
560
480 200
400
150
320
240 100
160
80
175 °C
25 °C
50
0
02468
VGS [V]
0
0 20 40 60 80 100 120 140 160 180
ID [A]
Rev. 2.2
page 5
2012-12-20
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPB014N06N.PDF ] | |
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