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Numéro de référence | IPP040N06N | ||
Description | Power-Transistor | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
Type
OptiMOSTM Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
IPP040N06N
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
60 V
4.0 mW
80 A
44 nC
38 nC
PG-TO220-3
Type
IPP040N06N
Package
PG-TO220-3
Marking
040N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
80 A
80
V GS=10 V, T C=25 °C,
R thJA =50K/W
20
Pulsed drain current2)
I D,pulse T C=25 °C
320
Avalanche energy, single pulse3) E AS I D=80 A, R GS=25 W
70 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20
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Pages | Pages 9 | ||
Télécharger | [ IPP040N06N ] |
No | Description détaillée | Fabricant |
IPP040N06N | Power-Transistor | Infineon Technologies |
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