DataSheet.es    


PDF IPB042N10N3G Data sheet ( Hoja de datos )

Número de pieza IPB042N10N3G
Descripción Power-Transistor
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



Hay una vista previa y un enlace de descarga de IPB042N10N3G (archivo pdf) en la parte inferior de esta página.


Total 11 Páginas

No Preview Available ! IPB042N10N3G Hoja de datos, Descripción, Manual

IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
OptiMOS3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max (TO 263)
ID
100 V
4.2 mW
100 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
Package
Marking
PG-TO263-3
042N10N
PG-TO262-3
045N10N
PG-TO220-3
045N10N
Maximum ratings, at T A=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=100 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
100
100
400
340
±20
214
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.8
page 1
2016-08-17

1 page




IPB042N10N3G pdf
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
400
320
10 V
7.5 V
6V
240
5.5 V
160
5V
80
4.5 V
IPB042N10N3 G IPI045N10N3 G
IPP045N10N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
9
4.5 V
6
3
5V
6V
7.5 V
10 V
0
012345
VDS [V]
0
0
50
ID [A]
100
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200 200
150
150
100
50
0
0
Rev. 2.8
25 °C
175 °C
246
VGS [V]
160
120
80
40
0
80
page 5
50 100
ID [A]
150
2016-08-17

5 Page





IPB042N10N3G arduino
100VOptiMOSª3PowerTransistor
IPB042_IPP_IPI_045N10N3G
RevisionHistory
IPB042_IPP_IPI_045N10N3 G
Revision:2016-08-23,Rev.2.8
Previous Revision
Revision Date
2.8 2016-08-23
Subjects (major changes since last revision)
Inclusion "x" axes values in diagram 4
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2016InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
11 Rev.2.8,2016-08-23

11 Page







PáginasTotal 11 Páginas
PDF Descargar[ Datasheet IPB042N10N3G.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IPB042N10N3GPower-TransistorInfineon Technologies
Infineon Technologies

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar