30J324 Datasheet PDF - Toshiba Semiconductor
| Part Number | 30J324 | |
| Description | GT30J324 | |
| Manufacturers | Toshiba Semiconductor | |
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GT30J324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications
Fast Switching Applications
Unit: mm
· The 4th generation
· Enhancement-mode
· Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.05 µs (typ.)
Low switching loss: Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.)
· Low saturation voltage: VCE (sat) = 2.0 V (typ.)
· FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Rating
600
±20
30
60
30
60
170
150
−55 to 150
Unit
V
V
A
A
W
°C
°C
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Max
0.735
1.90
Unit
°C/W
°C/W
Equivalent Circuit
Collector
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
1 2002-04-19
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10000
3000
1000
C – VCE
Cies
300
100
Common emitter
VGE = 0
30 f = 1 MHz
Tc = 25°C
10
0.1 0.3
1
3
Coes
Cres
10 30 100 300 1000
Collector-emitter voltage VCE (V)
GT30J324
500
Common emitter
RL = 10 Ω
Tc = 25°C
400
VCE, VGE – QG
20
16
300 200
300
200
VCE = 100 V
100
12
8
4
00
0 40 80 120 160 200
Gate charge QG (nC)
60
Common collector
50 VGE = 0
IF – VF
40
30
20
25
10 Tc = 125°C
−40
0
0
0.6 1.2
1.8 2.4 3.0 3.6
Forward voltage VF (V)
10
Irr
3
trr, Irr – IF
1000
300
1
trr
100
0.3
Common collector
di/dt = −100 A/µs
30
VGE = 0
: Tc = 25°C
: Tc = 125°C
0.1 10
0 5 10 15 20 25 30
Forward current IF (A)
Safe Operating Area
100
IC max (pulsed)*
30 IC max (continuous)
50 µs*
100 µs*
10
DC operation
3
*: Single pulse
1 Tc = 25°C
Curves must be
0.3 derated linearly
with increase in
temperature.
0.1
1 3 10
30
1 ms*
10 ms*
100 300
Collector-emitter voltage VCE (V)
1000
Reverse Bias SOA
100
30
10
3
1
0.3
Tj ≤ 125°C
VGE = 15 V
0.1 RG = 24 Ω
1 3 10 30 100 300
Collector-emitter voltage VCE (V)
1000
5 2002-04-19
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 30J324 electronic component. |
| Information | Total 7 Pages | |
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