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IRF7811 fiches techniques PDF

International Rectifier - HEXFET

Numéro de référence IRF7811
Description HEXFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7811 fiche technique
PD - 93812
PD - 93813
IIRRFF77880099//IIRRFF77881111
Provisional Datasheet
N-Channel Application-Specific MOSFETs HEXFET® Chipset for DC-DC Converters
• Ideal for CPU Core DC-DC Converters
• New CopperStrapTM Interconnect for Lower
Electrical and Thermal Resistance
• Low Conduction Losses
S1
AA
8D
• Low Switching Losses
S2
7D
• Minimizes Parallel MOSFETs for high
current applications
S3
6D
G4
5D
Description
These new devices employ advanced HEXFET® Power
SO-8
Top View
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make them ideal for
high efficiency DC-DC converters that power the latest
generation of mobile microprocessors.
DEVICE RATINGS
The IRF7809/IRF7811 employs a newCopperStrapTM
interconnect technology pioneered by International
VDS
IRF7809
30V
IRF7811
28V
Rectifier to dramatically improve the electrial & thermal
resistance contribution of the package. The new
CopperStrap SO-8 power MOSFETs are capable of
current ratings over 17A and power dissipation of 3.5W
@ 25°C ambient conditions, thereby reducing the need
for paralleled devices, improving efficiency and
RDS(on)
QG
Qsw
Q
oss
7.5 m
77.5 nC
23.9 nC
30 nC
11 m
23 nC
7 nC
31 nC
reliability and reducing board space.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS 4.5V)
Pulsed Drain Current
T = 25°C
A
TL = 90°C
Power Dissipation
T = 25°C
A
TL = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
www.irf.com
Symbol
VDS
VGS
I
D
IDM
P
D
TJ, TSTG
I
S
ISM
RθJA
RθJL
IRF7809
IRF7811
30 28
±12
17.6
14
16.3
13
100 100
3.5
3.0
–55 to 150
2.5 2.5
50 50
Max.
35
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
1
1/19/00

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