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IPP80N06S3L-06 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPP80N06S3L-06
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPP80N06S3L-06 fiche technique
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB80N06S3L-06
IPI80N06S3L-06, IPP80N06S3L-06
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
5.6 m
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N06S3L-06
IPI80N06S3L-06
IPP80N06S3L-06
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N06L06
3N06L06
3N06L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
I D,pulse
E AS
T C=25 °C
I D=40 A
Avalanche current, single pulse
I AS
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
455
80
±16
136
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2007-11-07

PagesPages 9
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