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Numéro de référence | IPB023N04NG | ||
Description | Power-Transistor | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
Ie]R
"%&$!"#™3 Power-Transistor
Features
Q& ( , - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I
Q* E2 =:7:65 2 44@B5:? 8 D@ $ )# 7@BD2 B86D2 AA=:42 D:@? C
Q' 492 ? ? 6=
Q' @B> 2 ==6F6=
Q. =DB2 =@G @? B6C:CD2 ? 46 R 9H"\[#
Q
F2 =2 ? 496 D6CD65
Q) 3 7B66 A=2 D:? 8 + @" , 4@> A=:2 ? D
Q" 2 =@86? 7B66 2 44@B5:? 8 D@ #
Product Summary
V 9H
R ,@? >2 H
I9
Type
#) ' ' !
#) ) ' ' !
IPP023N04N G
IPB023N04N G
,( K
*&+ Z"
1( 6
Package
Marking
E=%ID*.+%+
(*+C(,C
E=%ID**(%+
(*+C(,C
Maximum ratings, 2 DT W T E? =6CC@D96BG:C6 CA64:7:65
Parameter
Symbol Conditions
@? D:? E@EC5B2 :? 4EBB6? D
) E=C65 5B2 :? 4EBB6? D*#
F2 =2 ? 496 4EBB6? D C:? 8=6 AE=C6+#
F2 =2 ? 496 6? 6B8I C:? 8=6 AE=C6
!2 D6 C@EB46 F@=D2 86
)# $ , - 2 ? 5 $ ,
I 9 V =H
/ T 8 T
V =H
/ T 8
T
I 9$]aY_R
I 6H
E 6H
V =H
T 8 T
T 8 T
I 9 R =H "
Value
1(
1(
,((
1(
)-(
q*(
Unit
6
Z@
K
+ 6F
A2 86
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Pages | Pages 10 | ||
Télécharger | [ IPB023N04NG ] |
No | Description détaillée | Fabricant |
IPB023N04NG | Power-Transistor | Infineon Technologies |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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