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29F200BB fiches techniques PDF

STMicroelectronics - M29F200BB

Numéro de référence 29F200BB
Description M29F200BB
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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29F200BB fiche technique
M29F200BT
M29F200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Single Supply Flash Memory
PRELIMINARY DATA
s SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 45ns
s PROGRAMMING TIME
– 8µs per Byte/Word typical
s 7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
s PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s TEMPORARY BLOCK UNPROTECTION
MODE
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– M29F200BT Device Code: 00D3h
– M29F200BB Device Code: 00D4h
44
TSOP48 (N)
12 x 20mm
1
SO44 (M)
Figure 1. Logic Diagram
VCC
17
A0-A16
15
DQ0-DQ14
W DQ15A–1
M29F200BT
E M29F200BB BYTE
G RB
RP
VSS
AI02912
October 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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