DataSheet39.com

What is IPB123N10N3G?

This electronic component, produced by the manufacturer "Infineon Technologies", performs the same function as "Power-Transistor".


IPB123N10N3G Datasheet PDF - Infineon Technologies

Part Number IPB123N10N3G
Description Power-Transistor
Manufacturers Infineon Technologies 
Logo Infineon Technologies Logo 


There is a preview and IPB123N10N3G download ( pdf file ) link at the bottom of this page.





Total 11 Pages



Preview 1 page

No Preview Available ! IPB123N10N3G datasheet, circuit

IPP126N10N3 G
IPB123N10N3 G IPI126N10N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
Product Summary
V DS
R DS(on),max TO-263
ID
100 V
12.3 m
58 A
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
Package
PG-TO220-3
PG-TO263-3
Marking
126N10N
123N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
PG-TO262-3
126N10N
Parameter
Symbol Conditions
Value
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=46 A, R GS=25
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
58
42
232
70
±20
94
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) See figure 3
Unit
A
mJ
V
W
°C
Rev. 2.3
page 1
2010-06-23

line_dark_gray
IPB123N10N3G equivalent
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
200
180
10 V
160
7.5 V
140
120 6 V
100
80 5.5 V
60
5V
40
20 4.5 V
00
0
1
23
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
4
IPP126N10N3 G
IPB123N10N3 G IPI126N10N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
25
4.5 V
20
5V
15 6 V
7.5 V
10 V
10
5
0
5 0 20 40 60 80 100
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100
80 80
60 60
40 40
20
0
0
Rev. 2.3
175 °C
25 °C
246
V GS [V]
20
0
80
page 5
40 80
I D [A]
120
2010-06-23


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IPB123N10N3G electronic component.


Information Total 11 Pages
Link URL [ Copy URL to Clipboard ]
Download [ IPB123N10N3G.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
IPB123N10N3GThe function is Power-Transistor. Infineon TechnologiesInfineon Technologies

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

IPB1     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search