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IPI90R1K2C3 fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPI90R1K2C3
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPI90R1K2C3 fiche technique
CoolMOSPower Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Product Summary
V DS @ T J=25°C
R DS(on),max @T J=25°C
Q g,typ
IPI90R1K2C3
900 V
1.2
28 nC
PG-TO262
Type
IPI90R1K2C3
Package
PG-TO262
Marking
9R1K2C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current 2)
I D,pulse
Avalanche energy, single pulse
Avalanche energy, repetitive t AR 2),3)
Avalanche current, repetitive t AR 2),3)
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=0.92 A, V DD=50 V
I D=0.92 A, V DD=50 V
V DS=0...400 V
static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T J, T stg
Rev. 1.0
page 1
Value
5.1
3.2
10
68
0.31
0.92
50
±20
±30
83
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2008-07-29

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