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Número de pieza | IPD90N04S3-H4 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPD90N04S3-H4 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD90N04S3-H4
Product Summary
V DS
R DS(on),max
ID
40 V
4.3 mΩ
90 A
PG-TO252-3-11
Type
IPD90N04S3-H4
Package
Marking
PG-TO252-3-11 QN04H4
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=45 A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
90
90
360
330
90
±20
115
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2008-08-01
1 page IPD90N04S3-H4
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
360
10 V
320
280
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
20
18
7V
16
5.5 V
240 14
6.5 V
200 12
160
120
80
40
0
024
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
360
320
280
10
6V
8
6V
5.5 V
5V
68
6 6.5 V
7V
4
10 V
2
0 20 40 60 80 100 120
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 90 A; V GS = 10 V
-55 °C 25 °C
7
6
240
175 °C
5
200
160
4
120
80
3
40
0
2345678
V GS [V]
2
-60 -20
20
60 100 140 180
T j [°C]
Rev. 1.0
page 5
2008-08-01
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPD90N04S3-H4.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPD90N04S3-H4 | Power-Transistor | Infineon Technologies |
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