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Numéro de référence | IPD90N04S4-04 | ||
Description | Power-Transistor | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD90N04S4-04
Product Summary
V DS
R DS(on),max
ID
40 V
4.1 mΩ
90 A
PG-TO252-3-313
Type
IPD90N04S4-04
Package
Marking
PG-TO252-3-313 4N0404
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
90
81
360
95
90
±20
71
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-04-06
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Pages | Pages 9 | ||
Télécharger | [ IPD90N04S4-04 ] |
No | Description détaillée | Fabricant |
IPD90N04S4-02 | Power-Transistor | Infineon |
IPD90N04S4-03 | Power-Transistor | Infineon |
IPD90N04S4-04 | Power-Transistor | Infineon Technologies |
IPD90N04S4-05 | Power-Transistor | Infineon |
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