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IPD060N03LG fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPD060N03LG
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPD060N03LG fiche technique
Type
OptiMOS3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating
• Halogen-free according to IEC61249-2-21 *
IPD060N03L G
IPS060N03L G
IPF060N03L G
IPU060N03L G
Product Summary
V DS
R DS(on),max
ID
30 V
6 m
50 A
Type
IPD060N03L G
• Avalanche rated
• Pb-free plating; RoHS compliant
IPF060N03L G
IPS060N03L G
IPU060N03L G
Package
PG-TO252-3
PG-TO252-3-23
PG-TO251-3-11
PG-TO251-3
Marking
060N03L
060N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
060N03L
060N03L
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
Pulsed drain current2)
I D,pulse
V GS=4.5 V,
T C=100 °C
T C=25 °C
Avalanche current, single pulse3)
I AS
T C=25 °C
Avalanche energy, single pulse
E AS I D=20 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
1) J-STD20 and JESD22
* IPD060N03L G HF available with SP000680632 only in Malacca, Malaysia
IPS060N03L G available in HF
Rev. 2.1
page 1
50
50
50
43
350
50
60
6
±20
A
mJ
kV/µs
V
2010-04-07

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