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GA50JT12-247 fiches techniques PDF

GeneSiC - Normally - OFF Silicon Carbide Junction Transistor

Numéro de référence GA50JT12-247
Description Normally - OFF Silicon Carbide Junction Transistor
Fabricant GeneSiC 
Logo GeneSiC 





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GA50JT12-247 fiche technique
Normally OFF Silicon Carbide
Junction Transistor
Features
175 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
D
GA50JT12-247
VDS
RDS(ON)
ID (Tc = 25°C)
ID (Tc > 125°C)
hFE (Tc = 25°C)
=
=
=
=
=
1200 V
20 mΩ
100 A
50 A
104
G DS
TO-247
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA50JT12-247.............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate Source Voltage
Reverse Drain Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
ID
IG
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
VGS = 0 V
TC = 25°C
TC = 145°C
Conditions
TVJ = 175 oC,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 25 °C / 145 °C, tp > 100 ms
Value
1200
100
50
3.5
ID,max = 50
@ VDS ≤ VDSmax
>20
30
25
583 / 116
-55 to 175
Unit
V
A
A
A
A
Notes
Fig. 17
Fig. 17
Fig. 19
µs
V
V
W Fig. 16
°C
Jan 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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