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PDF A-GA10JT12 Data sheet ( Hoja de datos )
| Número de pieza | A-GA10JT12 | |
| Descripción | Super Junction Transistor | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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A-GA10JT12
Normally – OFF Silicon Carbide
Super Junction Transistor
VDS
I
D
RDS(ON)
= 1200 V
= 7A
= 220 mȍ
Features
• 225 oC maximum operating temperature
•Best in class temperature independent switching
and blocking performance
• Lowest VDS(ON) as compared to any other SiC switch
•Suitable for connecting an anti-parallel diode
•Gate oxide free SiC switch
•Positive temperature coefficient for easy paralleling
•Low gate charge
•Low intrinsic capacitance
Advantages
• Low switching losses
•Higher efficiency
Package
D
G
S
Applications
• Ideal for Aerospace and Defense Applications
•Down Hole Oil Drilling, Geothermal Instrumentation
•Hybrid Electric Vehicles (HEV)
•Solar Inverters
• Switched-Mode Power Supply (SMPS)
•Power Factor Correction (PFC)
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Motor Drives
Maximum Ratings, at Tj = 175 °C, unless otherwise specified
Parameter
Drain – Source Voltage
DC-Drain Current
Gate Peak Current
Power dissipation
Operating and storage temperature
Symbol
VDS
IDM
IGM
Ptot
Tj, Tstg
Conditions
TC 140 °C
TC = 25 °C
Values
1200
7
1.5
159
-55 to 175
Unit
V
A
A
W
°C
Electrical Characteristics, at Tj = 175 °C, unless otherwise specified
Parameter
Drain – Source On resistance
Drain leakage current
Symbol
RDS(ON)
IDSS
Conditions
IF = 7 A, Tj = 25 °C
IF = 7 A, Tj = 175 °C
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
Thermal Characteristics
Thermal resistance, junction - case
RthJC
min.
Values
typ.
220
390
0.1
0.5
max.
Unit
mȍ
μA
0.95
°C/W
January 2011
Preliminary Datasheet
http://www.genesicsemi.com
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet A-GA10JT12.PDF ] | |
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