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PDF HCT7000MTXV Data sheet ( Hoja de datos )
| Número de pieza | HCT7000MTXV | |
| Descripción | N-Channel Enhancement Mode MOS Transistor | |
| Fabricantes | OPTEK | |
| Logotipo |  |
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Product Bulletin HCT7000M
January 1996
N-Channel Enhancement Mode MOS Transistor
Type HCT7000M, HCT7000MTX, HCT7000MTXV
Features
• 200mA ID
• Ultra small surface mount package
• RDS(ON) < 5Ω
• Pin-out compatible with most SOT23
MOSFETS
Description
The HCT7000M is a high performance
enhancement mode N-channel MOS
transistor chip packaged in the ultra
small 3 pin ceramic LCC package.
Electrical characteristics are similar to
those of the JEDEC 2N7000. The pin-
out and footprint matches that of most
enhancement mode MOS transistors
built in SOT23 plastic packages.
Absolute Maximum Ratings
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40 V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA
Power Dissipation (TA = 25o C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Power Dissipation (TS(1) = 25o C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW(2)
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -55o C to +150o C
Thermal Resistance R∅ JC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100o C/W
Thermal Resistance R∅ JA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 583o C/W
Notes:
(1) TS = Substrate temperature that the chip carrier is mounted on.
(2) This rating is provided as an aid to designers. It is dependent upon mounting material and
methods and is not measurable as an outgoing test.
The HCT7000M is available processed
to TX and TXV levels per MIL-PRF-
19500. Order HCT7000MTX or
HCT7000MTXV. Typical screening and
lot acceptance tests are provided on
page 13-4. TX and TXV products
receive a VGS HTRB at 24 V for 48 hrs.
at 150o C and a VDS HTRB at 48 V for
260 hrs. at 150o C.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-36
(972) 323-2200
Fax (972) 323-2396
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet HCT7000MTXV.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HCT7000MTX | N-Channel Enhancement Mode MOS Transistor | OPTEK |
| HCT7000MTXV | N-Channel Enhancement Mode MOS Transistor | OPTEK |
| HCT7000MTXV | N-Channel Enhancement Mode MOS Transistor |  TT |
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