|
|
PDF NTMFS4922NE Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4922NE | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTMFS4922NE (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
NTMFS4922NE
Power MOSFET
30 V, 147 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Dual Sided Cooling Capability
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery, DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 100°C
TA = 25°C
TA = 25°C
TA = 100°C
VDSS
VGS
ID
PD
ID
30
±20
29.1
18.4
2.72
47.5
30.0
V
V
A
W
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =100°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 37 Apk, L = 0.3 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
PD
ID
PD
ID
PD
IDM
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
7.23 W
17.1 A
10.8
0.93 W
147
93
69.44
A
W
442
100
−55 to
+150
68
6
162.5
A
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
2.0 mW @ 10 V
3.0 mW @ 4.5 V
ID MAX
147 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4922NE
AYWZZ
D
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4922NET1G
Package
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 1
1
Publication Order Number:
NTMFS4922NE/D
1 page  
NTMFS4922NE
TYPICAL CHARACTERISTICS
7000
6000
5000
4000
3000
2000
1000
0
0
TJ = 25°C
Ciss VGS = 0 V
Coss
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
td(off)
10 tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
11
10 QT
9
8
7
6
5
4
3
QGS
QGD
TJ = 25°C
2 VDD = 15 V
1
0
VGS = 10 V
ID = 30 A
0 10 20 30 40 50 60 70 80
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
VGS = 0 V
25
20
15 TJ = 125°C
10
TJ = 25°C
5
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
1000
100
0 V < VGS < 10 V
SINGLE PULSE
TC = 25°C
10
1
10 ms
100 ms
1 ms
10 ms
0.1
0.01
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1 1
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
200 ID = 37 A
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTMFS4922NE.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTMFS4922NE | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |