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PDF NTTFS5116PL Data sheet ( Hoja de datos )
| Número de pieza | NTTFS5116PL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTTFS5116PL
Power MOSFET
−60 V, −20 A, 52 mW
Features
• Low RDS(on)
• Fast Switching
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Load Switches
• DC Motor Control
• DC−DC Conversion
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
Continuous Drain
Current RqJC (Note 1)
Power Dissipation
RqJC (Note 1)
Pulsed Drain Current
TA = 25°C
TA = 100°C
TA = 25°C
Steady
State
TA = 100°C
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Ava-
lanche Energy
L = 0.1 mH
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
VDSS
VGS
ID
PD
ID
PD
IDM
TTsJtg,
IS
EAS
IAS
TL
−60
±20
−5.7
−4.0
3.2
1.6
−20
−14
40
20
−76
−55 to
+175
−20
45
30
260
V
V
A
W
A
W
A
°C
A
mJ
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case – Steady
State (Note 1)
Symbol
RqJC
Value
3.8
Unit
°C/W
Junction−to−Ambient – Steady
State (Note 1)
RqJA
47
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
http://onsemi.com
V(BR)DSS
−60 V
RDS(on) MAX
52 mW @ −10 V
72 mW @ −4.5 V
ID MAX
−20 A
P−Channel MOSFET
D (5−8)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
SD
S 5116 D
S AYWWG D
GGD
5116
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS5116PLTAG WDFN8 1500/Tape & Reel
(Pb−Free)
NTTFS5116PLTWG WDFN8 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 1
1
Publication Order Number:
NTTFS5116PL/D
1 page  
100
D = 0.5
10
D = 0.2
D = 0.1
D = 0.05
1
D = 0.02
D = 0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
NTTFS5116PL
TYPICAL CHARACTERISTICS
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
1
10 100 1000
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTTFS5116PL.PDF ] | |
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