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Numéro de référence | US5U2 | ||
Description | 4V Drive Nch+SBD MOSFET | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Transistors
4V Drive Nch+SBD MOSFET
US5U2
US5U2
zStructure
Silicon N-channel MOSFET /
Schottky barrier diode
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in TUMT5 package.
2) High-speed switching, Low On-resistance.
3) 4V drive.
4) Built-in Low VF schottky barrier diode.
zApplications
Switching
zPackaging specifications
Type
US5U2
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zDimensions (Unit : mm)
TUMT5
2.0
1.3
Abbreviated symbol : U02
zInner circuit
(5)
(4)
∗2
∗1
(1) (2)
∗1 ESD protection diode
∗2 Body diode
(1)Gate
(2)Source
(3) (3)Anode
(4)Cathode
(5)Drain
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Channel temperature
Tch
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Limits
30
20
±1.4
±5.6
0.6
5.6
0.7
150
Unit
V
V
A
A
A
A
W / ELEMENT
°C
Rev.B
1/4
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Pages | Pages 5 | ||
Télécharger | [ US5U2 ] |
No | Description détaillée | Fabricant |
US5U1 | 2.5V Drive Nch+SBD MOSFET | ROHM Semiconductor |
US5U2 | 4V Drive Nch+SBD MOSFET | ROHM Semiconductor |
US5U29 | 2.5V Drive Pch+SBD MOS FET | ROHM Semiconductor |
US5U3 | 2.5V Drive Nch+SBD MOSFET | ROHM Semiconductor |
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