|
|
PDF NDF04N60Z Data sheet ( Hoja de datos )
| Número de pieza | NDF04N60Z | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NDF04N60Z (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
NDF04N60Z, NDD04N60Z
N-Channel Power MOSFET
600 V, 2.0 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol NDF NDD Unit
Drain−to−Source Voltage
Continuous Drain Current RqJC (Note 1)
Continuous Drain Current RqJC, TA =
100°C (Note 1)
VDSS
ID
ID
600
4.8 4.1
3.0 2.6
V
A
A
Pulsed Drain Current,
VGS @ 10V
Power Dissipation RqJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy, ID = 4.0
A
IDM
PD
VGS
EAS
20 20 A
30 83
±30
120
W
V
mJ
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%, TA = 25°C)
(Figure 15)
Vesd
VISO
3000
4500 −
V
V
Peak Diode Recovery (Note 2)
dV/dt
4.5 V/ns
MOSFET dV/dt
dV/dt
60 V/ns
Continuous Source Current
(Body Diode)
IS 4.0 A
Maximum Temperature for Soldering
Leads
TL
260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
www.onsemi.com
VDSS (@ TJmax)
650 V
RDS(on) (MAX) @ 2 A
2.0 Ω
N−Channel
D (2)
G (1)
S (3)
1 23
NDF04N60ZG,
NDF04N60ZH
TO−220FP
CASE 221AH
4
4
1 23
NDD04N60Z−1G
IPAK
CASE 369D
12
3
NDD04N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 9
1
Publication Order Number:
NDF04N60Z/D
1 page  
NDF04N60Z, NDD04N60Z
TYPICAL CHARACTERISTICS
10
50% (DUTY CYCLE)
1.0 20%
10%
5.0%
2.0%
0.1
1.0%
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1 1.0
PULSE TIME (s)
Figure 13. Thermal Impedance for NDF04N60Z
10
1.0 50% (DUTY CYCLE)
20%
10%
0.1 5.0%
2.0%
1.0%
0.01 SINGLE PULSE
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1 1.0
PULSE TIME (s)
Figure 14. Thermal Impedance for NDD04N60Z
RqJC = 4.2°C/W
Steady State
10 100 1000
RqJC = 1.5°C/W
Steady State
10 100 1000
LEADS
HEATSINK
0.110″ MIN
Figure 15. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NDF04N60Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NDF04N60Z | N-Channel Power MOSFET / Transistor | ON Semiconductor |
| NDF04N60ZH | N-Channel Power MOSFET / Transistor | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |