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PDF NDF04N60ZH Data sheet ( Hoja de datos )
| Número de pieza | NDF04N60ZH | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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NDF04N60ZH
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N-Channel Power MOSFET
600 V, 2.0 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol Typ Unit
Drain−to−Source Voltage
Continuous Drain Current RqJC
VDSS
ID
600
4.4
(Note 2)
V
A
Continuous Drain Current RqJC, TA = 100°C
ID 2.8 A
(Note 2)
Pulsed Drain Current,
VGS @ 10 V
Power Dissipation RqJC (Note 1)
Gate−to−Source Voltage
Single Pulse Avalanche Energy, ID = 4.0 A
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%, TA = 25°C)
(Figure 14)
IDM
PD
VGS
EAS
Vesd
VISO
18
(Note 2)
28
±30
120
3000
4500
A
W
V
mJ
V
V
Peak Diode Recovery
dv/dt
4.5 V/ns
(Note 3)
Continuous Source Current
(Body Diode)
IS 4.0 A
Maximum Temperature for Soldering Leads
TL 260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to
150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Limited by maximum junction temperature
3. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
VDSS
600 V
RDS(ON) (MAX) @ 2 A
2.0 W
MARKING
DIAGRAM
TO−220FP
CASE 221AH
NDF04N60ZH
AYWW
Gate
Source
Drain
A = Location Code
Y = Year
WW = Work Week
H = Halogen Free Package
N−Channel
D (2)
G (1)
S (3)
ORDERING INFORMATION
Device
NDF04N60ZH
Package
TO−220FP
Shipping
50 Units / Rail
(In Development)
© Semiconductor Components Industries, LLC, 2011
April, 2011 − Rev. P0
1
Publication Order Number:
NDF04N60ZH/D
1 page  
NDF04N60ZH
TYPICAL CHARACTERISTICS
10
50% (DUTY CYCLE)
1.0
20%
10%
5.0%
0.1 2.0%
1.0%
0.01 SINGLE PULSE
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1 1.0
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case)
RqJC = 4.4°C/W
Steady State
10 100 1000
LEADS
HEATSINK
0.130″ MIN
Figure 14. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NDF04N60ZH.PDF ] | |
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