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QS6K1 fiches techniques PDF

ROHM Semiconductor - 2.5V Drive Nch+Nch MOS FET

Numéro de référence QS6K1
Description 2.5V Drive Nch+Nch MOS FET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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QS6K1 fiche technique
Transistors
2.5V Drive Nch+Nch MOS FET
QS6K1
QS6K1
zStructure
Silicon N-channel
MOS FET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT6).
zApplication
Power switching, DC / DC converter.
zExternal dimensions (Unit : mm)
TSMT6
SOT-457
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : K01
zPackaging specifications
Type
QS6K1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation (TC=25°C)
Channel temperature
Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
30
12
±1.0
±4.0
0.8
4.0
1.25
0.9
150
55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
zEquivalent circuit
(6) (5)
(4) (6) (5) (4)
2 2
(1) (2) (3)
1 1
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board
Symbol
Rth (ch-a)
Limits
100
139
Unit
°C / W / TOTAL
°C / W / ELEMENT
Rev.B
1/3

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