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Numéro de référence | US6M1 | ||
Description | 4V+2.5V Drive Nch+Nch MOSFET | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Transistors
US6M1
4V+2.5V Drive Nch+Nch MOSFET
US6M1
zStructure
Silicon N-channel / P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT6).
zApplication
Power switching, DC / DC converter.
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : M01
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US6M1
Taping
TR
3000
zEquivalent circuit
(6) (5) (4)
∗1
∗2 ∗2
∗1
(1) (2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
Tr1 : Nchannel Tr2 : Pchannel
Unit
30 −20 V
20 −12 V
±1.4 ±1
A
±5.6 ±4
A
0.6 −0.4 A
5.6 −4 A
1 W / TOTAL
0.7 W / ELEMENT
150 °C
−55 to +150
°C
zThermal resistance
Parameter
Channel to ambient
∗2 Mounted on a ceramic board.
Symbol
Rth (ch-a)∗
Limits
125
179
Unit
°C / W /TOTAL
°C / W / ELEMENT
Rev.B
1/7
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Pages | Pages 8 | ||
Télécharger | [ US6M1 ] |
No | Description détaillée | Fabricant |
US6M1 | 4V+2.5V Drive Nch+Nch MOSFET | ROHM Semiconductor |
US6M11 | 1.5V Drive Nch+Pch MOSFET | ROHM Semiconductor |
US6M2 | 2.5V Drive Nch+Pch MOSFET | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
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