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US6M2 fiches techniques PDF

ROHM Semiconductor - 2.5V Drive Nch+Pch MOSFET

Numéro de référence US6M2
Description 2.5V Drive Nch+Pch MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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US6M2 fiche technique
Transistors
2.5V Drive Nch+Pch MOSFET
US6M2
US6M2
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT6
zFeatures
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.
2) High-speed switching, low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in G-S Protection Diode.
Abbreviated symbol : M02
zApplications
Switching
zPackaging specifications
Type
US6M2
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
zInner circuit
(6) (5)
(4)
1
2
2
1
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(1) (2)
(3) Tr2 (Pch) Drain
(3) (4) Tr2 (Pch) Source
1 ESD PROTECTION DIODE
2 BODY DIODE
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
Limits
Tr1 : Nchannel Tr2 : Pchannel
Unit
30 20 V
12 12 V
±1.5 ±1
A
±6 ±4 A
0.6 0.4 A
6 4 A
1.0 W / TOTAL
0.7 W / ELEMENT
150 °C
55 to +150
°C
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board
Symbol
Rth(ch-a)
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
Rev.A
1/3

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