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Numéro de référence | US6M2 | ||
Description | 2.5V Drive Nch+Pch MOSFET | ||
Fabricant | ROHM Semiconductor | ||
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1 Page
Transistors
2.5V Drive Nch+Pch MOSFET
US6M2
US6M2
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT6
zFeatures
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.
2) High-speed switching, low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in G-S Protection Diode.
Abbreviated symbol : M02
zApplications
Switching
zPackaging specifications
Type
US6M2
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
zInner circuit
(6) (5)
(4)
∗1
∗2
∗2
∗1
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(1) (2)
(3) Tr2 (Pch) Drain
(3) (4) Tr2 (Pch) Source
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
Limits
Tr1 : Nchannel Tr2 : Pchannel
Unit
30 −20 V
12 −12 V
±1.5 ±1
A
±6 ±4 A
0.6 −0.4 A
6 −4 A
1.0 W / TOTAL
0.7 W / ELEMENT
150 °C
−55 to +150
°C
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ∗
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
Rev.A
1/3
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Pages | Pages 4 | ||
Télécharger | [ US6M2 ] |
No | Description détaillée | Fabricant |
US6M1 | 4V+2.5V Drive Nch+Nch MOSFET | ROHM Semiconductor |
US6M11 | 1.5V Drive Nch+Pch MOSFET | ROHM Semiconductor |
US6M2 | 2.5V Drive Nch+Pch MOSFET | ROHM Semiconductor |
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