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RCX100N25 fiches techniques PDF

ROHM Semiconductor - Nch 250V 10A Power MOSFET

Numéro de référence RCX100N25
Description Nch 250V 10A Power MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RCX100N25 fiche technique
RCX100N25
Nch 250V 10A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
250V
320mW
10A
40W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Tc = 25°C
Ta = 25°C
Junction temperature
Range of storage temperature
lOutline
TO-220FM
lInner circuit
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Bulk
-
-
500
-
RCX100N25
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
Value
250
10
5.4
40
30
7.29
5.0
40
2.23
150
-55 to +150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/12
2012.08 - Rev.A

PagesPages 13
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